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175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND, unless otherwise noted.)
V DD , IN_H, IN_L......................................................-0.3V to +14V
DL ...............................................................-0.3V to (V DD + 0.3V)
HS............................................................................-5V to +180V
DH to HS.....................................................-0.3V to (V DD + 0.3V)
BST to HS ...............................................................-0.3V to +14V
dV/dt at HS ........................................................................50V/ns
Continuous Power Dissipation (T A = +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW
8-Pin SO-EP (derate 19.2mW/°C above +70°C) .....1538.5mW
Junction-to-Case Thermal Resistance ( θ JC )(Note 1)
8-Pin SO .......................................................................40°C/W
8-Pin SO-EP....................................................................6°C/W
Junction-to-Ambient Thermal Resistance ( θ JA )(Note 1)
8-Pin SO .....................................................................170°C/W
8-Pin SO-EP..................................................................52°C/W
Maximum Junction Temperature .....................................+150°C
Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
* Per JEDEC 51 Standard Multilayer board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JE5D51-7, using a four-
layer board. For detailed information on package thermal considerations, see www.maxim-ic.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(V DD = V BST = +8V to +12.6V, V HS = GND = 0V, T A = T J = -40°C to +125°C, unless otherwise noted. Typical values are at V DD =
V BST = +12V and T A = +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLIES
Operating Supply Voltage
V DD Quiescent Supply Current
(No Switching)
V DD Operating Supply Current
BST Quiescent Supply Current
BST Operating Supply Current
V DD
I DD
I DDO
I BST
I BSTO
(Notes 3 and 4)
IN_H = IN_L = GND (for A/C versions),
IN_H = GND, IN_L = V DD (for B/D versions)
f SW = 500kHz, V DD = +12V
IN_H = IN_L = GND (for A/C versions),
IN_H = GND, IN_L = V DD (for B/D versions)
f SW = 500kHz, V DD = V BST = +12V
8.0
70
15
12.6
140
3
40
3
V
μA
mA
μA
mA
UVLO (V DD to GND)
UVLO (BST to HS)
UVLO VDD
UVLO BST
V DD rising
BST rising
6.5
6.0
7.3
6.9
8.0
7.8
V
V
UVLO Hysteresis
LOGIC INPUT
0.5
V
Input-Logic High
V IH_
MAX15012_, CMOS (V DD /2) version
0.67 x
V DD
0.55 x
V DD
V
MAX15013_, TTL version
2
1.65
Input-Logic Low
V IL_
MAX15012_, CMOS (V DD /2) version
0.4 x
V DD
0.33 x
V DD
V
MAX15013_, TTL version
1.4
0.8
Logic-Input Hysteresis
V HYS
MAX15012_, CMOS (V DD /2) version
MAX15013_, TTL version
1.6
0.25
V
2
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